4.2 Semiconductor quantum-dot devices

Quantum dots are nanocrystals of semiconductor material that due to the 3D spatial confinement of free carriers exhibit enhanced quantum effects similar to single molecules (particle in a box). This unique feature allows inherent advantages compared to conventional semiconductor structures, from which stems the rapid expansion of QD based devices to numerous applications like medical imaging, biochemical sensing, lightning, solar cells, displays, quantum communications and high performance lasers. 

In the Optical-Communication Laboratory we focus on two fundamental axes. The first consist of the detailed design and numerical investigation of various photonic structures and waveguide configurations, whereas the second consist of experimental characterization of prototypes and the investigation of novel regimes of operation. The devices designed and characterized include: multi section lasers under CW or pulsed operation, flared gain lasers and amplifiers, external cavities and MOPA configurations.

Through this effort we have endeavored to alleviate inherent disadvantages of QD devices and achieve amplifiers designs and laser configurations that could deliver world record performance in terms of peak power, pulse duration and time-bandwidth product TBWP. These efforts allowed the infiltration of QD lasers into applications like nanosurgery and multiphoton imaging,  

Moreover, through the investigation of novel regimes of operation breakthrough results that include, simultaneous multi-wavelength mode locking, Q-switching elimination and mode locking stabilization through optical feedback, investigation of the optical feedback tolerance of higher emission states, and pulse width narrowing in the presence of wavelength splitting phenomena have been achieved. Finally, Chaotic operation was demonstrated experimentally for the first time without the use of optical feedback.

 

Related projects:

  • FAST-DOT

 

Significant publications: 

  • C. Mesaritakis, C. Simos, H. Simos, S. Mikroulis, I. Krestnikov and D. Syvridis, "Pulse width narrowing due to dual ground state emission in quantum dot passively mode locked lasers", AIP Applied Physics Letters, vol. 96, pages 211110(1-3), May 2010.
  • M. A. Cataluna, D. I. Nikitichev, S. Mikroulis, H. Simos, C. Simos, C. Mesaritakis, D. Syvridis, I. Krestnikov, D. Livshits, and E. U. Rafailov, "Dual-wavelength mode-locked quantum-dot laser, via ground and excited state transitions: experimental and theoretical investigation", OSA Optics Express, vol. 18, pages 12832-12838, June 2010.
  • C. Mesaritakis, C. Simos, H. Simos, S. Mikroulis, I. Krestnikov, E. Roditi, and D. Syvridis, "Effect of optical feedback to the ground and excited state emission of a passively mode locked quantum dot laser", AIP Applied Physics Letters, vol. 97, pages 061114(1-3), Aug. 2010.
  • C. Mesaritakis, C. Simos, H. Simos, I. Krestnikov, and D. Syvridis, "Dual ground-state pulse generation from a passively mode-locked InAs/InGaAs quantum dot laser", AIP Applied Physics Letters, vol. 99, pages 141109(1-3), Oct. 2011.
  • H. Simos, C. Simos, C. Mesaritakis and D. Syvridis, "Two section quantum dot mode locked lasers under optical feedback: pulse broadening and harmonic operation", IEEE Journal of Quantum Electronics, vol 48, pages 872-877, Jul. 2012
  • Y. Ding, A. Alhazime, D. Nikitichev, K. Fedorova, M. Ruiz, M. Tran, Y. Robert, A. Kapsalis, H. Simos, C. Mesaritakis, T. Xu, P. Bardella, M. Rossetti, I. Krestnikov, D. Livshits, I. Montrosset, D. Syvridis, M. A. Cataluna, M. Krakowski, and E. Rafailov, “Tunable master-oscillator power amplifier based on chirped quantum-dot structure”, IEEE Photonics Technology Letters, vol. 24 (20), pp.1841-1844, Oct. 2012.
  • C. Mesaritakis, C. Simos, H. Simos, A. Kapsalis, E. Roditi, I. Krestnikov, D. Syvridis, "Effect of the number of quantum dot layers and dual state emission on the performance of InAs/InGaAs passively mode-locked lasers" AIP Applied Physics Letters, vol. 101 (25), pp. 251115(1-4), Dec. 2012.
  • H. Simos, M. Rossetti, C. Simos, C. Mesaritakis, T. Xu, P. Bardella, I. Montrosset and D. Syvridis, “Numerical analysis of passively mode-locked quantum-dot lasers with absorber section at the low-reflectivity output facet”, IEEE Journal of Quantum Electronics, vol. 49, pp. 3-10, Jan. 2013.
  • C. Mesaritakis, A. Kapsalis, H. Simos, C. Simos, M. Krakowski, I. Krestnikov, D. Syvridis, “Tapered InAs/InGaAs quantum dot semiconductor optical amplifier design for enhanced gain and beam quality”, OSA Optics Letters, vol. 38 (14), pages 2404-2406, July 2013.